| 1. | The positive-going signal subtracts from the forward bias of the lower transistor .
正向信号则使它的正向偏压减弱。 |
| 2. | The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .
位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。 |
| 3. | A new method of accurate electrical characterization of semiconductor diodes at forward bias
一种精确检测半导体二极管正向电特性的新方法 |
| 4. | Zero adjustment function , forward adjust is forward biased , reverse adjust is reverse biased
零点调整功能，顺时针调整可以偏负，逆时针调整可以偏正。 |
| 5. | It is found that by applying a forward bias of about 6 volts in vacuum , s - type negative differencial resistance ( ndr ) phenomena were found in such structure , which is of potential application
并在实验中首次发现在经过真空处理后的al n - zno p - si异质结中表现出了类似gainp algainp量子阱等结构的s型负阻( ndr )现象。 |
| 6. | Under forward bias , the el spectra are found to have a luminescence band peaked at 510 nm of si - sic > 2 films and al - si - sic > 2 films , which originates mainly from the luminescence centers of some defects in the siox
对薄膜进行了乩谱的测量。发现了si - sio _ 2薄膜和al - si - sio _ 2薄膜均存在很强的峰位在510nm的电致发光( el )谱峰。 |
| 7. | In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used , the i - v characteristics for the diode can be idealized
与二极管的工作电流和电压相比，在阻断（截止）状态下漏电流很小，在导通状态下电压比较小，因此二极管的电流-电压（伏安）特性可以理想化。 |
| 8. | The usual method to broaden the bandwidth of the pin diode switch is combining the pin diodes with stub filters : when under reverse bias , the didoe is part of the filter , the transmission bandwidth is broadened ; when under forward bias , the structure of the filter is destroyed , signal is isolated
Pin二极管开关展宽频带的方法一般是把pin二极管结合进短截线滤波器，使pin二极管在反向偏置时作为滤波器的组成部分，以展宽开关在传输状态下的频带；当二极管正向偏置的时候，滤波器的结构被破坏，起到隔离的作用。 |
